Growth and characterization of SiGeSn quantum well photodiodes

被引:37
|
作者
Fischer, Inga A. [1 ]
Wendav, Torsten [2 ]
Augel, Lion [1 ]
Jitpakdeebodin, Songchai [1 ]
Oliveira, Filipe [1 ]
Benedetti, Alessandro [3 ]
Stefanov, Stefan [4 ]
Chiussi, Stefano [4 ]
Capellini, Giovanni [5 ]
Busch, Kurt [2 ,6 ]
Schulze, Joerg [1 ]
机构
[1] Univ Stuttgart, Inst Halbleitertech IHT, D-70569 Stuttgart, Germany
[2] Humboldt Univ, Inst Phys, AG Theoret Opt & Photon, Berlin, Germany
[3] Univ Vigo, CACTI, Vigo 36310, Spain
[4] Univ Vigo, Dept Fis Aplicada, Vigo 36310, Spain
[5] IHP, D-15236 Frankfurt, Oder, Germany
[6] Max Born Inst, D-12489 Berlin, Germany
来源
OPTICS EXPRESS | 2015年 / 23卷 / 19期
关键词
MODEL;
D O I
10.1364/OE.23.025048
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B-and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations. (C) 2015 Optical Society of America
引用
收藏
页码:25048 / 25057
页数:10
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