On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

被引：0

作者：

Vandendaele, W. ^{[1
]}

Lorin, T. ^{[1
]}

Gwoziecki, R. ^{[1
]}

Baines, Y. ^{[1
]}

Biscarrat, J. ^{[1
]}

Jaud, M. A. ^{[1
]}

Gillot, C. ^{[1
]}

Charles, M. ^{[1
]}

Plissonnier, M. ^{[1
]}

Reimbold, G. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France

来源：

2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2017年

关键词：

BUFFER LAYERS; FIELD-PLATE; ALGAN/GAN; OPERATION; HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic R-ON transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related hole trap in the GaN buffer layers (E-A = E-T - E-V similar or equal to 0.9eV). These two parasitic effects can lead to long recovery time ( > 1ks) after reverse bias stress.

引用

页码：126 / 129

页数：4

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