Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

被引：24

作者：

Minoura, Yuya ^{[1
]}

Kasuya, Atsushi ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

GE3N4; DIELECTRICS; PMOSFETS; IMPACT;

D O I：

10.1063/1.4813829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality Ge-based metal-oxide-semiconductor (MOS) stacks were achieved with ultrathin oxynitride (GeON) gate dielectrics. An in situ process based on plasma nitridation of the base germanium oxide (GeO2) surface and subsequent metal electrode deposition was proven to be effective for suppressing electrical deterioration induced by the reaction at the metal/insulator interface. The electrical properties of the bottom GeON/Ge interface were further improved by both low-temperature oxidation for base GeO2 formation and high-temperature in situ vacuum annealing after plasma nitridation of the base oxide. Based on the optimized in situ gate stack fabrication process, very high inversion carrier mobility (mu(hole): 445cm(2)/Vs, mu(electron): 1114 cm(2)/Vs) was demonstrated for p- and n-channel Ge MOSFETs with Al/GeON/Ge gate stacks at scaled equivalent oxide thickness down to 1.4 nm. (C) 2013 AIP Publishing LLC.

引用

页数：5

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