ZnO Nanowire Field Emitters Integrated with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor

被引：0
|
作者：
Li, Xiaojie [1 ]
Zhang, Zhipeng [1 ]
Ou, Hai [1 ]
She, Juncong [1 ]
Deng, Shaozhi [1 ]
Xu, Ningsheng [1 ]
Chen, Jun [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2017年
关键词：
ZnO nanowires; a-IGZO TFT; Field emitter; EMISSION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.
引用
收藏
页码：206 / 207
页数：2
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