Metamorphic InGaAs/AlInAs heterostructure field effect transistors: Layer growth, device processing and performance

被引：0
|
作者：
Cappy, A [1 ]
机构：
[1] INST ELECT & MICROELECT NORD,UMR CNRS 9929,F-59652 VILLENEUVE DASCQ,FRANCE
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3 / 6
页数：4
相关论文
共 50 条
  • [1] SCALED ALINAS/INGAAS AND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    JALALI, B
    NOTTENBURG, RN
    CHEN, YK
    LEVI, AFJ
    CHO, AY
    PANISH, MB
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2602 - 2602
  • [2] OMVPE GROWTH OF DEVICE QUALITY ALINAS/INGAAS AND ALINAS/INP HETEROSTRUCTURES
    AINA, L
    MATTINGLY, M
    MARTIN, E
    STECKER, L
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S38 - S38
  • [3] Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
    LaRoche, JR
    Ren, F
    Temple, D
    Pearton, SJ
    Kuo, JM
    Baca, AG
    Cheng, P
    Park, YD
    Hudspeth, Q
    Hebard, AF
    Arnason, SB
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (12) : 2117 - 2122
  • [4] INFLUENCE OF BASE THICKNESS ON COLLECTOR BREAKDOWN IN ABRUPT ALINAS/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    JALALI, B
    CHEN, YK
    NOTTENBURG, RN
    SIVCO, D
    HUMPHREY, DA
    CHO, AY
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) : 400 - 402
  • [5] PHYSICS OF BREAKDOWN IN INALAS/N(+)-INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    BAHL, SR
    DELALAMO, JA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2268 - 2275
  • [6] Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
    Dyakonova, N
    Teppe, F
    Lusakowski, J
    Knap, W
    Levinshtein, M
    Dmitriev, AP
    Shur, MS
    Bollaert, S
    Cappy, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [7] GATE CURRENT IN ALINAS/GAINAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS (HIGFETS)
    KAMADA, M
    ISHIKAWA, H
    FENG, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1358 - 1363
  • [8] High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
    Wu, Yi-Chen
    Tsai, Jung-Hui
    Chiang, Te-Kuang
    Chiang, Chung-Cheng
    Wang, Fu-Min
    [J]. SOLID-STATE ELECTRONICS, 2014, 92 : 52 - 56
  • [9] Microwave performance of ZnO/ZnMgO heterostructure field effect transistors
    Sasa, Shigehiko
    Maitani, Takeshi
    Furuya, Yuto
    Amano, Takeshi
    Koike, Kazuto
    Yano, Mitsuaki
    Inoue, Masataka
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02): : 449 - 452
  • [10] High-performance heterostructure field-effect transistors (HFETs) with step-modulationed InGaAs channel structure
    Liu, WC
    Laih, LW
    Chang, WL
    Cheng, SY
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1998, 52 (01) : 89 - 93
12345