Temperature-insensitive UV-induced Bragg gratings in silica-based planar lightwave circuits on Si

被引：13
|
作者：
Hibino, Y [1 ]
Abe, M
Tanaka, T
Himeno, A
Albert, J
Johnson, DC
Hill, KO
机构：
[1] NTT, Photon Labs, Tokai, Ibaraki 3191193, Japan
[2] Commun Res Ctr, Ottawa, ON K2H 8SA, Canada
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 21期
关键词：
D O I：
10.1049/el:19991269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel technique is proposed to realise temperature-insensitive Bragg gratings in silica-based lightwave circuits on Si using a bimetal plate. A wavelength shift < 0.15nm is successfully demonstrated between -40 and 80 degrees C in the Bragg gratings written in a Mach-Zehnder interferometer.
引用
收藏
页码：1844 / 1845
页数：2
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