Optical detection of the superconducting proximity effect: Raman scattering on Nb/InAs

被引：3

作者：

Greene, LH ^{[1
]}

Dorsten, JF ^{[1
]}

Roshchin, IV ^{[1
]}

Abeyta, AC ^{[1
]}

Tanzer, TA ^{[1
]}

Feldmann, WL ^{[1
]}

Bohn, PW ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷

关键词：

D O I：

10.1007/BF02583678

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Raman scattering on InAs coated with 60 to 100 Angstrom thick Nb films (T-c = 2.5 to 5K) is studied. The Nb films, sputtered onto in-situ ion-etched n(+)-InAs (1.2x10(19)cm(-3)) are flat to similar to 5 Angstrom. The low-frequency coupled plasmon-phonon Raman mode (L_) associated with bulk InAs is centered at 221cm(-1). The forbidden LO phonon at 237cm(-1), associated with the surface charge accumulation region (CAR), is observed because the thickness of the surface CAR is less than the Thomas-Fermi screening length. As the temperature is reduced below T-c the magnitude of the LO phonon mode intensity, relative to that of the L_ mode, increases by more than 40%.

引用

页码：741 / 742

页数：2

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