Optical constants of InxGa1-xN (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes

被引：9
|
作者：
Hazari, Arnab [1 ]
Bhattacharya, Aniruddha [1 ]
Frost, Thomas [1 ]
Zhao, Songrui [2 ]
Baten, Md. Zunaid [1 ]
Mi, Zetian [2 ]
Bhattacharya, Pallab [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA
[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
来源：
OPTICS LETTERS | 2015年 / 40卷 / 14期
基金：
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词：
REFRACTIVE-INDEX; BAND-GAP; SEMICONDUCTORS; ALLOYS; DEPENDENCE; NITRIDE; EPITAXY; LAYERS;
D O I：
10.1364/OL.40.003304
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Complex refractive indices of InxGa1-xN epitaxial layers have been determined from analysis of data obtained by spectroscopic ellipsometry. The measurements were made in the wavelength range of 400-1687 nm. The samples were grown by plasma-assisted molecular beam epitaxy on (001) silicon substrate and are of the wurtzite crystalline form. A comparison of the fundamental absorption edge derived from analysis of measured data and the measured photoluminescence peak emission energy indicates a Stokes shift present in the alloys. (C) 2015 Optical Society of America
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收藏
页码：3304 / 3307
页数：4
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