A Novel Method for Current Balancing between Parallel-connected IGBTs

被引：0
|
作者：
Chen, Ying [1 ]
Zhuo, Fang [1 ]
Zhang, Fan [1 ]
Pan, Wenjie [1 ]
Yang, Yan [2 ]
机构：
[1] Xi An Jiao Tong Univ, 28 West Xianning Rd, Xian, Peoples R China
[2] Xian Siyuan Univ, 28 West Xianning Rd, Xian, Peoples R China
来源：
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE) | 2016年
关键词：
Insulated-gate bipolar transistors (IGBTs); Gate driver; Current balancing; Feedback control; Over-current protection;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Parallel-connected IGBTs are prone to large-current destruction in high-power applications due to current unbalance between each IGBT branches. This paper proposes a novel control method to improve the current balance in order to protect the device against over current destruction. The method uses two control loops to confine the current rising speed as well as to reconcile the current change start time difference. Without current measurement or any manual operation, the implementation is thus simple and convenient. Details about the strategy and its superiority are discussed. Simulation results validate the effectiveness of the proposed method.
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页数：8
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