Phonon-Drag Images of GaAs and AlAs Quantum Wells

被引:0
|
作者
Jasiukiewicz, Czeslaw [1 ]
Lehmann, Dietmar [2 ]
机构
[1] Rzeszow Univ Technol, Fac Math & Appl Phys, Ul W Pola 2, PL-35959 Rzeszow, Poland
[2] Tech Univ Dresden, Inst Theoret Phys, D-01062 Dresden, Germany
关键词
D O I
10.1088/1742-6596/104/1/012026
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
In the presented (first) study we analyze the changes in the phonon-drag patterns of AlAs and GaAs quantum wells as a function of well thickness. Our numerical calculations include the phonon focusing, the acoustic anisotropy of the electron-phonon coupling and the conduction-band anisotropy. From such analysis, in connection with future systematic experimental studies, one can draw information about the electron-phonon coupling parameters and the effective mass of the electrons. A domination of electron-phonon interaction by deformation potential coupling in narrow AlAs quantum wells is shown. A comparison of our numerical results with recent phonon-drag measurements of an AlAs quantum well shows very good agreement.
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页数:5
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