Design and Realization of a 13-bit Serial to Parallel GaAs Digital Circuit for 6-18 GHz T/R Module

被引：0

作者：

Jiang, Yifan ^{[1
]}

Jiang, Xin ^{[2
]}

Li, Yao ^{[2
]}

Hong, Wei ^{[1
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 2010096, Jiangsu, Peoples R China

[2] Milliway IC Corp, Nanjing 211111, Jiangsu, Peoples R China

来源：

2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB2016) | 2016年

关键词：

Serial to Parallel; GaAs; Enhancement Depletion (ED) PHEMT; T/R module;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 13-bit serial to parallel GaAs digital circuit based on GaAs 0.15um Enhancement-Depletion(ED) PHEMT has been realized and measured. This serial to parallel circuit is designed for the 6-18 GHz T/R module, it controls 1-bit switch, 6-bit shifter and 6-hit attenuator. This GaAs logic circuit could reduce the size of T/R module chip and improve the integration degree of the system. The simulated and measured data on some basic logic cells (NOR logic gate, levelshifter) is shown in the paper. We also tested a 6-bit serial to parallel logic testcell. The 13-bit serial to parallel logic circuit work successfully in the whole T/R module.

引用

页数：3

共 9 条

[1] 6-18 GHz 4 bit digital phase shifter MMIC
Institute of RF-and OE-ICs, Southeast University, Nanjing 210096, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2008, 2 (208-211):
[2] 13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications
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[4] Design of SPDT switch, 6 bit digital attenuator, 6 bit digital phase shifter for L-band T/R module using 0.7 μM GaAs MMIC technology
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[6] Design and implementation Of SPDT Switch, 6 Bit Digital Attenuator, 6 Bit Digital Phase Shifter For L-Band T/R Module Using 0.7(A)over capμm GaAs MMIC Technology
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[7] Realization of Low in-Band Harmonic for Compact 6–18-GHz T/R Module Under TX-Mode Operation
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[8] Realization of Low in-Band Harmonic for Compact 6-18-GHz T/R Module Under TX-Mode Operation
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[9] Design of a 6-18 GHz Low Noise Amplifier using 0.25-um GaAs pHEMT D-mode technology
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