Spin-orbit-induced hole spin relaxation in InAs and GaAs quantum dots

被引:16
|
作者
Climente, J. I. [1 ]
Segarra, C. [1 ]
Planelles, J. [1 ]
机构
[1] Univ Jaume 1, Dept Quim Fis & Anal, E-12080 Castellon de La Plana, Spain
来源
NEW JOURNAL OF PHYSICS | 2013年 / 15卷
关键词
SEMICONDUCTORS;
D O I
10.1088/1367-2630/15/9/093009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the effect of valence band spin-orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole-light hole (hh-lh) mixing and all the spin-orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully three-dimensional Hamiltonian. We show that hh-lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. Simultaneously accounting for both mechanisms is necessary for quantitatively correct results in quasi-two-dimensional QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments.
引用
收藏
页数:21
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