Novel homojunction far infrared detectors

被引：0

作者：

Shen, WZ ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Appl Phys, Shanghai 200030, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Georgia State Univ, Atlanta, GA 30303 USA

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2000年 / 19卷 / 03期

关键词：

homojumotion structures; far-infrared; detectors;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The recent development of p-GaAs and Si homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (>40 mu m) detectors was briefly reviewed, both theoretically and experimentally. The emphasis is on the detector photoresponse mechanism and detector performance. Promising results indicate that p-GaAs and Si HIWIP far-infrared detectors have great potentiality to become a strong competitor in far-infrared applications.

引用

页码：161 / 168

页数：8

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