Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films

被引：32
|
作者：
Saad, M. [1 ]
Kassis, A. [1 ]
机构：
[1] Atom Energy Commiss Syria, Damascus, Syria
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 136卷 / 01期
关键词：
ZnO:Al; Sputtering; Thin film; rf power; O-vacancies; Al-interstitials; ZINC-OXIDE; OPTICAL-PROPERTIES; TRANSPARENT;
D O I：
10.1016/j.matchemphys.2012.06.053
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminum doped zinc oxide ZnO:Al thin films were prepared using rf magnetron sputtering. The preparation was performed at room temperature and low pressure with varying rf power between P = 50 W and P = 500 W. Structural, electrical and optical film properties were studied depending on rf power. Special attention was paid to correlations among film structure, sheet resistance and optical transmission. Films with largest crystallite size exhibited highest optical transmission, but not lowest electrical resistivity. An explanation for this finding was sought in terms of the amount of Al atoms incorporated in the films and the places they occupy, parameters which are in turn related to rf power. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：205 / 209
页数：5
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