TARS: A Toolbox for Statistical Reliability Modeling of CMOS Devices

被引：0
|
作者：
Diaz-Fortuny, J. [1 ]
Martin-Martinez, J. [1 ]
Rodriguez, R. [1 ]
Nafria, M. [1 ]
Castro-Lopez, R. [2 ]
Roca, E. [2 ]
Fernandez, F. V. [2 ]
机构：
[1] UAB, Elect Engn Dept, REDEC Grp, Barcelona, Spain
[2] Univ Seville, CSIC, IMSE CNM, Inst Microelect Sevilla, Seville, Spain
来源：
2017 14TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD) | 2017年
关键词：
Variability; Aging; BTI; CHC; RTN; Device; Modeling; Automated characterization lab;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a toolbox for the automation of the electrical characterization of CMOS transistors. The developed software provides a user-friendly interface to carry out different tests to evaluate time-zero (i.e., process) and time-dependent variability in CMOS devices. Also, the software incorporates a post-processing capability that allows users to visualize the data. Moreover, without loss of generality, the toolbox allows the user, from the measured data, to feed a particular physics-based model that accounts for various aging phenomena.
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页数：4
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