Large signal microwave performances of high-k metal gate 28 nm CMOS technology

被引：1
|
作者：
Ouhachi, R. [1 ]
Pottrain, A. [1 ]
Ducatteau, D. [1 ]
Okada, E. [1 ]
Gloria, D. [2 ]
Gaquiere, C. [1 ]
机构：
[1] Univ Lille 1, Unite Mixta Rech CNRS 8520, IEMN, F-59652 Villeneuve Dascq, France
[2] STMicroelect France, F-38926 Crolles, France
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 25期
关键词：
D O I：
10.1049/el.2012.3443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A report is presented on the first microwave power performances of high-k metal gate 28 nm CMOS devices. Measurements were performed in a large signal operation based on a nonlinear vector network analyser associated with a passive tuner at 10GHz. First, the behaviour of these high-k metal gate 28 nm CMOS devices was analysed in A-class operation. Then, the maximum withstandable drain voltage (before device destruction) was determined for various topologies. Finally, a comparison between this new technology and the usual CMOS 45 nm technology was exposed.
引用
收藏
页码：1627 / 1629
页数：2
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