Numerical simulation and modeling of thermal transient in silicon power devices

被引：8

作者：

Magnone, P. ^{[1
]}

Fiegna, C. ^{[1
,2
]}

Greco, G. ^{[3
]}

Bazzano, G. ^{[3
]}

Rinaudo, S. ^{[3
]}

Sangiorgi, E. ^{[1
,2
]}

机构：

[1] Univ Bologna, ARCES, I-47521 Cesena, FC, Italy

[2] Univ Bologna, Dept Elect Elect & Informat Engn Guglielmo Marcon, I-40136 Bologna, Italy

[3] STMicroelectronics, I-95121 Catania, Italy

来源：

SOLID-STATE ELECTRONICS | 2013年 / 88卷

关键词：

Thermal network; Power; MOSFET; Thermal transient; Modeling; Electro-thermal simulation;

D O I：

10.1016/j.sse.2013.04.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive an equivalent thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The thermal resistances and capacitances are calculated by assuming a cylindrical propagation of the heat. Electro-thermal numerical simulations are performed in order to study the heat propagation inside the device and to verify the accuracy of the proposed model. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：69 / 72

页数：4

共 50 条

[1] Numerical simulation of thermal runaway phenomena in silicon semiconductor devices
Shioda, Kazanori
Oobu, Toshiharu
Kijima, Kenji
[J]. Heat Transfer - Asian Research, 2002, 31 (06): : 438 - 455
[2] TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS
BANK, RE
COUGHRAN, WM
FICHTNER, W
GROSS, EH
ROSE, DJ
SMITH, RK
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) : 436 - 451
[3] TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS
BANK, RE
COUGHRAN, WM
FICHTNER, W
GROSSE, EH
ROSE, DJ
SMITH, RK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 1992 - 2007
[4] Transient electro-thermal modeling of bipolar power semiconductor devices
[J]. 1600, Morgan and Claypool Publishers (06):
[5] Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation
Bychikhin, S.
Haberfehlner, G.
Rhayem, J.
Vanderstraeten, D.
Gillon, R.
Pogany, D.
[J]. MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) : 1427 - 1430
[6] Thermal modeling and measurement of large high power silicon devices with asymmetric power distribution
Deeney, J
[J]. 2002 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, PROCEEDINGS, 2002, 4931 : 300 - 305
[7] Novel simulation approach for transient analysis and reliable thermal management of power devices
Castellazzi, A.
Ciappa, M.
[J]. MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) : 1500 - 1504
[8] Electro-Thermal Modeling of SiC Power Devices for Circuit Simulation
Yin, Shan
Wang, Tao
Tseng, K. J.
Zhao, Jiyun
Hu, Xiaolei
[J]. 39TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2013), 2013, : 718 - 723
[9] Thermal simulation and power map modeling sensitivity study for chipset silicon
Lee, Eng Kwong
Sasidaran, Dhinesh
Cheang, Wai Keong
Deo, Song Chin
Ng, Kiat Hong
Lee, Chee Siong
[J]. 2007 INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND PACKAGING, 2007, : 53 - 57
[10] On the modeling of the transient thermal behavior of semiconductor devices
Rinaldi, N
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (12) : 2796 - 2802

← 1 2 3 4 5 →