Strong localization across the metal-insulator transition at the Ag/Si(111)-(√3 x √3)R30° interface

被引：0
|
作者：
Tang, Yuan-Yuan [1 ]
Guo, Jian-Dong
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
FRONTIERS OF PHYSICS | 2013年 / 8卷 / 01期
关键词：
surface conductivity; metal-insulator transition; localization; scanning tunneling microscopy; ELECTRICAL-CONDUCTION; ELECTRONIC TRANSPORT; SURFACE-STATE; ADATOM GAS; PROBES;
D O I：
10.1007/s11467-013-0290-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present the temperature dependent electrical transport measurements of Ag/Si(111)-(ae3 x ae3)R30A degrees by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle (IET) model. A metal-insulator transition occurs at similar to 115 K.The lowtemperature transportmeasurements clearly reveal the strong localization characteristics of the insulating phase.
引用
收藏
页码：44 / 49
页数：6
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