Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN

被引：4
|
作者：
Reddy, N. Ramesha
Reddy, V. Rajagopal [1 ]
Choi, Chel-Jong
机构：
[1] Univ Mysore, Dept Elect, Postgrad Ctr, Hassan 573220, India
[2] ETRI, Future Technol Res Div, Taejon 305350, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 10期
关键词：
microstructural; ohmic contacts; Auger electron microscopy; transmission electron microscopy;
D O I：
10.1016/j.mee.2006.02.019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0 x 10(18) cm(-3)) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900 degrees C. It is shown that the electrical properties are improved upon annealing at 900 degrees C for 1 min in nitrogen ambient. The 900 degrees C annealed contact produced a specific contact resistance of 8.4 x 10(-6) Omega cm(2). It is further shown that the contact exhibits thermal stability during annealing at 900 degrees C. Based on the Auger electron microscopy and transmission electron microscopy Studies. the formation of TiN laver results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1981 / 1985
页数：5
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