Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

被引：1
|
作者：
Cetinkaya, S. [1 ]
Cetinkara, H. A. [1 ]
Kahraman, S. [1 ]
Bayansal, F. [1 ]
机构：
[1] Mustafa Kemal Univ, Dept Phys, TR-31034 Antakya, Turkey
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2013年 / 93卷 / 09期
关键词：
microelectronics; optical absorption; diffraction; electrical conductivity; ZnO; diode structures; SCLC; SCHOTTKY DIODE; ELECTRICAL CHARACTERISTICS; VOLTAGE CHARACTERISTICS; N-SI; TEMPERATURE; FILMS; CONTACTS; NANORODS;
D O I：
10.1080/09500839.2013.820362
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25nm, 1.55x10(-3) and 3.23x10(13)cm(-2), respectively. From absorption spectra, the optical band gap was found to be approximate to 3.17eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71eV from I-V characteristics and 0.73eV using the Norde plots.
引用
收藏
页码：550 / 559
页数：10
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