P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

被引：54
|
作者：
Myers, M. A. [1 ]
Myers, M. T. [2 ]
General, M. J. [2 ]
Lee, J. H. [3 ]
Shao, L. [2 ,3 ]
Wang, H. [1 ,3 ]
机构：
[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[2] Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA
[3] Texas A&M Univ, Mat Sci & Engn Program, College Stn, TX 77843 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期
基金：
美国国家科学基金会;
关键词：
THERMAL-STABILITY; DAMAGE; NITROGEN; DEFECTS;
D O I：
10.1063/1.4751467
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO thin films were grown on sapphire (0001) substrates by pulsed-laser deposition at 700 degrees C. 70 keV N+ ion implantation was performed under various temperatures and fluences in the range of 300-460 degrees C and 3.0 x 10(14)-1.2 x 10(15) cm(-2), respectively. Hall measurements indicate that the ZnO films implanted at 460 degrees C are p-type for all fluences used herein. Hole-carrier concentrations lie in the range of 2.4 x 10(16)-5.2 x 10(17) cm(-3), hole mobilities in the range of 0.7-3.7 cm(2) V-1 s(-1), and resistivities between 18-71 Omega cm. Transmission-electron microscopy reveals major microstructural differences between the n-type and p-type films. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751467]
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页数：5
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