Structural defects and microindentation analysis of zone melted Bi2Te3-xSex whiskers

被引:3
|
作者
Jariwala, Bhakti [1 ]
Shah, Dimple V. [1 ]
机构
[1] SV Natl Inst Technol, Dept Appl Phys, Surat 395007, India
关键词
Crystal morphology; Directional solidification; Optical microscopy; Growth from melt; Bismuth compounds; Semiconducting materials; THERMOELECTRIC PROPERTIES; DISLOCATION LOOPS; ALLOY;
D O I
10.1016/j.jcrysgro.2012.01.028
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The dislocation density and microhardness of Bi2Te3-xSex (x=0-0.3 at% Se) grown by the zone melting method have been investigated. We also have got the whiskers of Bi2Te3-xSex at the end of ampoule during the growth process. SEM was characterized for surface analysis of the grown whisker. The length of the grown whiskers was around 10 mm in the direction of the crystallographic c-axis. Concentric pairs of dislocation triangle were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by the chemical etching technique. Dislocation etching was achieved on all crystal planes examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the (001) faces of Bi2Te3-xSex. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:143 / 146
页数:4
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