Generating and controlling spin-polarized currents induced by a quantum spin Hall antidot

被引:36
|
作者
Dolcetto, G. [1 ,2 ,3 ]
Cavaliere, F. [1 ,2 ]
Ferraro, D. [2 ,3 ,4 ]
Sassetti, M. [1 ,2 ]
机构
[1] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy
[2] Ctr Nazl Ric Superconductors Oxides & Other Innov, I-16146 Genoa, Italy
[3] Ist Nazl Fis Nucl, I-16146 Genoa, Italy
[4] Univ Lyon, CNRS, Lab Phys, Ecole Normale Super Lyon, F-69364 Lyon 07, France
关键词
CONDUCTANCE; CHARGE;
D O I
10.1103/PhysRevB.87.085425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study an electrically controlled quantum spin Hall antidot embedded in a two-dimensional topological insulating bar. Helical edge states around the antidot and along the edges of the bar are tunnel coupled. The close connection between spin and chirality, typical of helical systems, allows to generate a spin-polarized current flowing across the bar. This current is studied as a function of the external voltages, by varying the asymmetry between the barriers. For asymmetric setups, a switching behavior of the spin current is observed as the bias is increased, both in the absence and in the presence of electron interactions. This device allows to generate and control the spin-polarized current by simple electrical means. DOI: 10.1103/PhysRevB.87.085425
引用
收藏
页数:6
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