Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for Nano-Regime Applications

被引：0

作者：

Lee, Seongjae ^{[1
]}

Jang, Moongyu ^{[1
]}

Kim, Yarkyeon ^{[1
]}

Jeon, Myungsim ^{[1
]}

Park, Kyoungwan ^{[2
]}

机构：

[1] Elect & Telecommun Res Inst, Future Technol Res Div, Nanoelect Device Team, Taejon 305350, South Korea

[2] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2005年 / 1卷 / 01期

关键词：

Schottky barrier; SB-MOSFETs; erbium-silicide; platinum-silicide; scaling; DIBL; subthreshold swing;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Erbium-/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor-field-effect transistors(SB-MOSFETs) were manufactured at various sizes, from 20 mu m to 23 nm. The manufactured SB-MOSFETs showed excellent drain induced barrier lowering(DIBL) characteristics due to the presence of a Schottky barrier between the source and the channel. The DIBL and subthreshold swing(SS) characteristics were comparable to the values of ultimate scaling limit of double gate(DG) MOSFETs, which shows the possible application of SB-MOSFETs in the nanoscale regime.

引用

页码：27 / 29

页数：3

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