Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

被引：7
|
作者：
Kobayashi, Atsushi [1 ]
Okubo, Kana [1 ]
Ohta, Jitsuo [1 ]
Oshima, Masaharu [2 ,3 ]
Fujioka, Hiroshi [1 ,3 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[3] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 11期
基金：
日本学术振兴会;
关键词：
InN; polarity; two-dimensional growth; MOLECULAR-BEAM EPITAXY; SEGREGATION;
D O I：
10.1002/pssa.201228287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2251 / 2254
页数：4
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