Methods of ellipsometric analysis of polarization optical properties of inhomogeneous surface layers of optoelectronics elements

被引:0
|
作者
Zemlyanskii, V. S. [1 ]
Khramtsovskii, I. A. [1 ]
Gorlyak, A. N. [2 ]
Stepanchuk, A. A. [3 ]
机构
[1] St Petersburg State Univ Informat Technol Mech &, St Petersburg 197101, Russia
[2] Electrotech Univ, St Petersburg 197376, Russia
[3] St Petersburg Inst Technol, St Petersburg 198013, Russia
关键词
Silicates - Ellipsometry - Glass - Light polarization - Light reflection;
D O I
10.1134/S0030400X08080237
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The basic regularities of changes in the main ellipsometric parameters of a light beam reflected from inhomogeneous surface layers of silicate glasses have been described on the basis of the Drude-Born theories of polarized light reflection. A method of physicomathematical modeling of the refractive index profile in an inhomogeneous surface layer of silicate glasses is reported, which makes it possible to determine, with the lowest second-kind error probability, a model of an inhomogeneous reflecting system that is adequate to the object of study.
引用
收藏
页码:320 / 325
页数:6
相关论文
共 50 条
  • [1] Methods of ellipsometric analysis of polarization optical properties of inhomogeneous surface layers of optoelectronics elements
    V. S. Zemlyanskiĭ
    I. A. Khramtsovskiĭ
    A. N. Gorlyak
    A. A. Stepanchuk
    [J]. Optics and Spectroscopy, 2008, 105 : 320 - 325
  • [2] In situ ellipsometric analysis of optically inhomogeneous layers
    V. A. Shvets
    [J]. Optics and Spectroscopy, 2010, 108 : 989 - 995
  • [3] In situ ellipsometric analysis of optically inhomogeneous layers
    Shvets, V. A.
    [J]. OPTICS AND SPECTROSCOPY, 2010, 108 (06) : 989 - 995
  • [4] Ellipsometric study of the optical properties of InGaAsN layers
    Li, PW
    Guang, HC
    Li, NY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (9AB): : L898 - L900
  • [5] Ellipsometric study of the optical properties of InGaAsN layers
    Li, Pei-Wen
    Guang, Huei-Chen
    Li, Nein-Yi
    [J]. 1600, JJAP, Tokyo (39):
  • [6] Polarization-singular structure of phase-inhomogeneous layers for diagnostics and classification of their optical properties
    Ushenko, A. G.
    Dubolazov, A. V.
    [J]. ROMOPTO 2012: TENTH CONFERENCE ON OPTICS: MICRO- TO NANOPHOTONICS III, 2013, 8882
  • [7] Optical properties modulation of porous silicon layers for optoelectronics applications
    Salcedo, W
    Peres, HM
    Galeazzo, E
    Rubin, JC
    Ramirez-Fernandez, FJ
    [J]. SELECTED PAPERS FROM THE INTERNATIONAL CONFERENCE ON OPTOELECTRONIC INFORMATION TECHNOLOGIES, 2000, 4425 : 277 - 281
  • [8] Stokes parameters polarization scattering properties of optical elements surface of different material
    Zhang, Yingge
    Tian, Ailing
    Liu, Bingcai
    Liu, Weiguo
    Wang, Dasen
    [J]. OPTIK, 2019, 185 : 1238 - 1246
  • [9] Polarization-singular Processing of Phase-inhomogeneous Layers Laser Images to Diagnose and Classify their Optical Properties
    Ushenko, Yuriy O.
    Tomka, Yuriy Ya.
    Misevich, Igor Z.
    Angelsky, Anton-Pavlo
    Bachinsky, Victor T.
    [J]. ADVANCES IN ELECTRICAL AND COMPUTER ENGINEERING, 2011, 11 (01) : 3 - 10
  • [10] Polarization-singular structure in laser images of phase-inhomogeneous layers to diagnose and classify their optical properties
    Ushenko, Yu. O.
    Misevich, I. Z.
    Angelsky, A. P.
    Bachinsky, V. T.
    Telen'ga, O. Yu.
    Olar, O. I.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (03) : 248 - 258