Structural and optical modeling of electro deposited CuInSe2 thin films

被引：1
|
作者：
Ferhi, S. [1 ]
Boujmil, M. F. [1 ]
Bessais, B. [1 ]
机构：
[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia
来源：
EMM-FM2011 - FIRST EURO MEDITERRANEAN MEETING ON FUNCTIONALIZED MATERIALS | 2012年 / 29卷
关键词：
Semiconductor; Chalcopyrite; thin layers; CuInSe2; Photovoltaic;
D O I：
10.1051/epjconf/20122900017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of thin film solar cells. In this study, CuInSe2 thin films were prepared at room temperature using the electrodepositing method. The as-prepared films were found to be amorphous. The CuInSe2 films were crystallized in a tubular resistive furnace, and characterized by means of the the X-ray diffraction (XRD) and UV-VIS-NIR spectroscopy techniques. The parameters to optimize are the temperature and duration of the annealing time, and the Cu/In ratio in the precursors.
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页数：6
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