Precise SPICE macromodel applied to high-voltage power MOSFET

被引：0

作者：

Lomeli, FS ^{[1
]}

Cerdeira, A ^{[1
]}

机构：

[1] CINVESTAV, Dept Ingn Elect, SEES, IPN, Mexico City 07300, DF, Mexico

来源：

MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 01期

关键词：

D O I：

10.1016/S0026-2714(01)00127-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A macromodel for precise SPICE simulations of high-voltage power MOSFET is presented. The macromodel takes into account basic features of these devices as higher value of the resistance between channel and drain and lower current level though the body diode compared to low-voltage power MOSFET. It also considers that high-voltage power MOSFET work mostly in saturation regime. All required parameters are extracted from direct electrical measurements. Simulations using this and previous macromodels are compared with experimental DC and AC characteristics to demonstrate a much better correspondence with experiment of the macromodel presented. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

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页码：149 / 152

页数：4

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