Investigation of the structural properties of ferromagnetic Mn-implanted Si

被引:15
|
作者
Bolduc, M [1 ]
Awo-Affouda, C [1 ]
Stollenwerk, A [1 ]
Huang, MB [1 ]
Ramos, F [1 ]
LaBella, VP [1 ]
机构
[1] SUNY Albany, Ctr Nanoscale Sci & Engn, Albany, NY 12203 USA
关键词
ion implantation; ferromagnetism; spintronic; silicon; SIMS;
D O I
10.1016/j.nimb.2005.08.132
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The structural properties of Si crystals that were made ferromagnetic through Mn-ion implantation are studied. 300-keV Mn+ ions were implanted at 350 degrees C at doses of 1-10 x 10(15) cm(-2) reaching peak concentrations of 0.1-0.8 at.%. Ferromagnetic hysteresis loops were obtained using a SQUID magnetometer at temperature of 300 K, yielding a saturation magnetization of 0.2 emu/g after annealing at 800 degrees C for 5 min. The Curie temperature for all samples was found to be greater than 400 K. After annealing, a pronounced redistribution of Mn is observed in the depth profiles as measured through SIMS profiling. The quality of the resulting crystal structure has been investigated by RBS in the channeling mode. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:367 / 370
页数:4
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