Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

被引：23
|
作者：
Kajiwara, Takashi [1 ]
Nakamori, Yuzuru [1 ]
Visikovskiy, Anton [1 ]
Iimori, Takushi [2 ]
Komori, Fumio [2 ]
Nakatsuji, Kan [3 ]
Mase, Kazuhiko [4 ]
Tanaka, Satoru [1 ]
机构：
[1] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka 8190395, Japan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[3] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268502, Japan
[4] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 12期
关键词：
ELECTRONIC-STRUCTURE; CARBON NANOTUBES;
D O I：
10.1103/PhysRevB.87.121407
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consists of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1 (1) over bar 00], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high-density GNRs, enable us to observe the electronic structure at K points by angle-resolved photoemission spectroscopy, showing a clear band-gap opening of at least 0.14 eV. DOI: 10.1103/PhysRevB. 87.121407
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页数：4
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