Nanocell Fabrication on GaSb at Room Temperature and Cryogenic Temperature

被引：4

作者：

Nitta, Noriko ^{[1
]}

Yokoyama, Kazuhiro ^{[1
]}

Taniwaki, Masafumi ^{[1
]}

机构：

[1] Kochi Univ Technol, Dept Environm Syst Engn, Kami City, Kochi 7828502, Japan

来源：

ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷

关键词：

Focused ion beam; Void; Ion-implantation; Cellular structure; Nanocell; Nanostructure; Low temperature; ION-IMPLANTATION; DEFECT STRUCTURE;

D O I：

10.1063/1.4766543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanocell fabrication on GaSb (100) is performed at room temperature and 130 K utilizing 30 keV Ga+ in a focused ion beam system. Nanocell lattices with 80 - 300 nm dot intervals were realized at room temperature. It was shown that fabrication at 130 K has some advantages comparing to fabrication at room temperature. At low temperature, nanocell lattices are easily obtained in wider range of dot interval, without secondary void formation.

引用

页码：280 / 283

页数：4

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