Comparison of radiation damage in silicon induced by proton and neutron irradiation

被引：77

作者：

Ruzin, A

Casse, G

Glaser, M

Zanet, A

Lemeilleur, F

Watts, S

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

[2] Brunel Univ, Dept Elect Engn & Elect, Uxbridge UB8 3PH, Middx, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 05期

关键词：

neutrons; protons; radiation damage; radiation hardness; silicon detectors;

D O I：

10.1109/23.795808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The subject of radiation damage to silicon detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested, Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.

引用

页码：1310 / 1313

页数：4

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