Ensemble interactions in strained semiconductor quantum dots

被引：48
|
作者：
Leon, R
Marcinkevicius, S
Liao, XZ
Zou, J
Cockayne, DJH
Fafard, S
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91009 USA
[2] Royal Inst Technol, Dept Phys Opt 2, S-10044 Stockholm, Sweden
[3] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.60.R8517
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large variations in InxGa1-xAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs [001] substrates with different surface step densities. It was found that decreasing dot-dot separation blueshifts all levels, narrows intersublevel transition energies, shortens luminescence decay times for excited states, and increases inhomogeneous photoluminescence broadening. These changes in optical properties are attributed to a progressive strain deformation of the confining potentials and to the increasing effects of positional disorder in denser dot ensembles.
引用
收藏
页码：R8517 / R8520
页数：4
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