All-optical on-chip memory based on ultra high Q InGaAsP photonic crystal nanocavity

被引：0

作者：

Shinya, Akihiko ^{[1
]}

Matsuo, Shinji ^{[2
]}

Yosia ^{[1
]}

Tanabe, Takasumi ^{[1
]}

Kuramochi, Eiichi ^{[1
]}

Sato, Tomonari ^{[2
]}

Kakitsuka, Takaaki ^{[2
]}

Notomi, Masaya ^{[1
]}

机构：

[1] NTT Basic Res Labs, 3-1 Morinosato Wakamiya Atsugi, Kanagawa 2430198, Japan

[2] NTT Photon Labs, Kanagawa 2430198, Japan

来源：

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate all-optical bistable memory operation with 1.3Q-InGaAsP pbotonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at a few tens of mu W and the operating energy required for switching is only 30 tu. (C)2008 Optical Society of America

引用

页码：1021 / +

页数：2

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