Spectroscopic investigation of CVD graphene

被引:1
|
作者
Tincu, Bianca [1 ,2 ]
Avram, Andrei [1 ]
Avram, Marioara [1 ]
Tucureanu, Vasilica [1 ,3 ]
Matei, Alina [1 ]
Marculescu, Catalin [1 ]
Burinaru, Tiberiu Alecu [1 ,4 ]
Comanescu, Florin [1 ]
Mihalache, Iuliana [1 ]
Popescu, Marian Catalin [1 ]
Demetrescu, Ioana [2 ]
机构
[1] Natl Inst Res & Dev Microtehnol IMT Bucharest, 126A Erou Iancu Nicolae Str, Bucharest 077190, Romania
[2] Univ Politehn Bucuresti, Fac Appl Chem & Mat Sci, Str Gheorghe Polizu 7, Bucharest, Romania
[3] Transylvania Univ Brasov, Dept Mat Sci, Brasov, Romania
[4] Univ Agron Sci & Vet Med Bucharest, Fac Vet Med, Anat Pathol Dept, Bucharest, Romania
关键词
graphene; chemical vapour deposition (CVD); transfer; SEM; Raman; RAMAN-SPECTROSCOPY; COPPER; FILM;
D O I
10.1117/12.2323590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to the honeycomb arrangement of carbon atoms, graphene exhibits unique properties, such as superior thermal conductivity, exceptionally large surface area and zero bandgap, and has become one of the fastest growing domains of scientific research. Many processes have been developed to obtain single layer graphene by chemical vapour deposition, but the main drawback of using graphene in large area industrial manufacturing processes is the transfer procedure from the transition metal to the target substrate. In the present paper we study the possibility to obtain single layer graphene by chemical vapour deposition (CVD) on copper catalyst and transfer it to different substrates. The quality of CVD graphene on copper catalyst and on substrate target after transfer was evaluated from the structural (by Raman spectroscopy), morphological (by SEM) and optical properties (UV-VIS) point of view. The transfer process proposed in this paper enable the use of this type of material in applications such as pressure sensors and field effect transistors, when proper control of the graphene/substrate interface is very important.
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页数:7
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