To investigate the electrical characteristics of polymer based light emitting diode (LED) devices, we fabricated the hole transport device (HTD) and the electron transport device (ETD). The ITO and Au with high work function were used as electrodes for the HTD, and the Al and Li:Al with low work function were used for the ETD. The active layer materials were poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (CzEH-PPV), and poly[2-(4-tert-butylphenyl)-5-phenyl-1,3,4-oxadiazole-5(2-ethylhexoxy)-1,4-phenylene vinylene] (OxdEH-PPV). We measured the current density-applied field (J-E) characteristics of the HTD and ETD with various thickness at different temperatures. The results of the J-E curves were analyzed by using tunneling model, space charge limited conduction (SCLC) model, etc. In the SCLC model, the mobility of the hole and the electron of MEH-PPV is similar to 10(-6) and similar to 10(-8) cm(2)/V s, respectively. For CzEH-PPV and OxdEH-PPV, the hole mobility is similar to the value of the electron mobility with similar to 10(-10) cm(2)/V s. The luminescent efficiency of CzEH-PPV or OxdEH-PPV is higher than that of MEH-PPV. The results of photoconductivity of the systems qualitatively agrees with the result of the electrical measurement. We analyze that the balance of the electron and the hole mobility plays an important role for the efficiency of the LEDs. (C) 2001 Elsevier Science B.V. All rights reserved.