Spectroscopic and electrochemical studies of the growth of chemical oxide in SC-1 and SC-2

被引：0
|
作者：
Petitdidier, S [1 ]
Guyader, F [1 ]
Barla, K [1 ]
Rouchon, D [1 ]
Rochat, N [1 ]
Erre, R [1 ]
Bertagna, V [1 ]
机构：
[1] STMicroelect, F-38926 Crolles, France
来源：
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING VII, PROCEEDINGS | 2002年 / 2002卷 / 26期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
By combining spectroscopic and electrochemical measurements, the growth of chemical silicon oxide in oxidizing solutions SC-1 and SC-2 has been studied during several hours. On one hand, the SC-1 oxidation is always in quasi-stationary equilibrium between oxidation of the substrate and the dissolution of oxide layer. The analysis of the whole results shows that the structure of the oxide built is evolving. In the other hand, it was found that the growth in SC-2 is in agreement. with a. mechanism of a spreading oxide layer.
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页码：205 / 210
页数：6
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