A distributed charge storage with GeO2 nanodots

被引：43
|
作者：
Chang, TC [1 ]
Yan, ST
Hsu, CH
Tang, MT
Lee, JF
Tai, YH
Liu, PT
Sze, SM
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
[2] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan
[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan
[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
[6] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
[7] Natl Nano Device Lab, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1697627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics.
引用
收藏
页码：2581 / 2583
页数：3
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