Laser Ablation: A supporting technique to micromachining of SiC

被引：0

作者：

Vanko, G. ^{[1
]}

Zehetner, J. ^{[2
]}

Choleva, P. ^{[2
]}

Lalinsky, T. ^{[1
]}

Hudek, P. ^{[2
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] Vorarlberg Univ Appl Sci, A-6850 Dornbirn, Austria

来源：

NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年

关键词：

MEMS; GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an effective fabrication method of AlGaN/GaN membrane on SiC for MEMS sensors applications. It employs laser ablation as a supporting technique to the plasma enhanced etching methods. Circular patterns transferred deeply into bulk SiC substrates fabricated by ablation using (1) excimer laser and (2) femtosecond (fs) laser tools were compared. We found that the fs laser tool is more suitable for bulk micromachining of SiC because of the clearness of the process. The additional higher thermal load can be also suppressed. A simple laser cleaning procedure was found allowing us to fabricate deep structures without the ablation process retardation by debris formation.

引用

页码：259 / 262

页数：4

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