We report the control of the growth mode of Bi2FeCrO6 thin and ultrathin films by either tuning the pulsed laser deposition parameters or by using a buffer layer. The films are epitaxial and the heterostructures exhibit very smooth interfaces, thus eliminating the main obstacle in the realization of tunnel junctions. By characterizing the functional properties of thin films we find that Bi2FeCrO6 retains its room temperature multiferroic character even at the nanoscale. The coexistence of these properties in ultra-thin Bi2FeCrO6 films will pave the way to design multifunctional devices for applications in spintronics and electronics, such as ferroelectric tunnel junctions or magnetic tunnel junctions with ferroelectric barriers.
机构:
Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, Ciudad Univ S-N, E-28040 Madrid, SpainUniv Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, Ciudad Univ S-N, E-28040 Madrid, Spain
机构:
East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Liu, Yuan
Lin, Jianjun
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Lin, Jianjun
Zhong, Ni
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Zhong, Ni
Xiang, Ping-Hua
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Xiang, Ping-Hua
Chen, Ye
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Chen, Ye
Yang, Pingxiong
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Yang, Pingxiong
Chu, Junhao
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Chu, Junhao
Duan, Chun-Gang
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
Duan, Chun-Gang
Sun, Lin
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East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
机构:
Institut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), VarennesInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Nechache R.
Carignan L.-P.
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École Polytechnique de Montréal, Département de Génie Physique, Montréal, QC H3C 6A7, Station Centre-villeInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Carignan L.-P.
Gunawan L.
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机构:
Department of Materials Science and Engineering, Brockhouse Institute for Materials Research, McMaster University, West HamiltonInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Gunawan L.
Harnagea C.
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Institut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), VarennesInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Harnagea C.
Botton G.A.
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机构:
Department of Materials Science and Engineering, Brockhouse Institute for Materials Research, McMaster University, West HamiltonInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Botton G.A.
Ménard D.
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École Polytechnique de Montréal, Département de Génie Physique, Montréal, QC H3C 6A7, Station Centre-villeInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes
Ménard D.
Pignolet A.
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机构:
Institut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), VarennesInstitut National de la Recherche Scientifique (INRS), Université du Québec, INRS-Énergie Matériaux and Télécommunications (INRS-EMT), Varennes