Writing accuracy of EBM-3500 electron-beam mask writing system

被引：3

作者：

Ohtoshi, K ^{[1
]}

Sunaoshi, H ^{[1
]}

Takamatsu, J ^{[1
]}

Okabe, F ^{[1
]}

Ishibashi, K ^{[1
]}

Yoshitake, S ^{[1
]}

Yamada, H ^{[1
]}

Tamamushi, S ^{[1
]}

Anze, H ^{[1
]}

Kamikubo, T ^{[1
]}

Ogawa, Y ^{[1
]}

机构：

[1] Toshiba Machine Co Ltd Japan, Div Semicond Equipment, Numazu, Shizuoka 4108510, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII | 2001年 / 4409卷

关键词：

D O I：

10.1117/12.438403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high accuracy electron beam writing system EBM-3500 has been developed for 130 nm node lithography technology. The EBM-3500 is based on its predecessor EBM-3000 system and incorporates new features to improve writing accuracies. Based on the extensive error analyses of the EBM-3000[1], several important improvements in such areas as ground noise and stray magnetic field reductions, among others, have been made. Thanks to these improvements, EBM-3500 achieves high accuracies to satisfy the present and future technology requirements.

引用

页码：238 / 247

页数：10

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