Effect of passive film on electrochemical surface treatment for indium tin oxide

被引：5

作者：

Wu, Yung-Fu ^{[1
]}

Chen, Chi-Hao ^{[1
]}

机构：

[1] MingChi Univ Technol, Dept Chem Engn, Taipei 24301, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 550卷

关键词：

Oxide materials; Thin films; Liquid-solid reactions; Electrochemical reactions; Atomic force microscopy; Photoelectron spectroscopies; ITO FILMS; PHOTOELECTRON-SPECTROSCOPY; TRANSPARENT; IMPROVEMENT; PERFORMANCE; SOLVENT;

D O I：

10.1016/j.jallcom.2012.09.147

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：263 / 267

页数：5

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