The local electron interaction with point defects in zinc blende GaN, CdTe and ZnTe: ab initio calculation

被引：0

作者：

Malyk, O. P. ^{[1
]}

Syrotyuk, S. V. ^{[1
]}

机构：

[1] Lviv Polytech Natl Univ, Semicond Elect Dept, Lvov, Ukraine

来源：

2018 14TH INTERNATIONAL CONFERENCE ON ADVANCED TRENDS IN RADIOELECTRONICS, TELECOMMUNICATIONS AND COMPUTER ENGINEERING (TCSET) | 2018年

关键词：

semiconductors; electron transport; point defects; ab initio approach; CHARGE-CARRIER SCATTERING; CRYSTAL-LATTICE DEFECTS; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present paper the electron interaction with different types of defects in zinc blende GaN, CdTe and ZnTe is considered. It is carried out by using the short-range scattering models for electron interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, neutral and ionized impurities, static strain centers. For the first time the electron transition probabilities were evaluated with the ab initio wave functions and self-consistent potentials. The latter were calculated within the projector augmented waves (PAW) formalism as implemented in the ABINIT code. The temperature dependences of electron mobility and Hall factor in the range of 30-300 K for GaN, in the range 10-1210 K for CdTe and in the range 900-1300 K for ZnTe arc calculated. It is shown that the results obtained in the framework of short-range scattering models are much better compared to the experiment than those obtained with their long-range counterparts.

引用

页码：405 / 409

页数：5

共 49 条

[1] Zinc-blende GaN: ab initio calculations
Alves, JLA
Alves, HWL
de Oliveira, C
Valadao, RDSC
Leite, JR
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 57 - 60
[2] Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study
Camacho-Garcia, J. H.
Ruiz-Peralta, Ma L.
Hernandez-Cocoletzi, G.
Bautista-Hernandez, A.
Salazar-Villanueva, M.
Escobedo-Morales, A.
Chigo-Anota, E.
Moreno-Hernandez, J. C.
[J]. ADVANCES IN CONDENSED MATTER PHYSICS, 2022, 2022
[3] Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from First Principles
Malyk, O. P.
Syrotyuk, S. V.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (08) : 4212 - 4218
[4] Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from First Principles
O. P. Malyk
S. V. Syrotyuk
[J]. Journal of Electronic Materials, 2018, 47 : 4212 - 4218
[5] Ab-initio Study of Structural, Electronic and Optical Properties of ZnTe at Wurtzite and Zinc Blende Phases
Aazi, Mohamed
Atmani, El Houssine
Fazouan, Najma
Bziz, Ibrahim
Es-smairi, Adil
[J]. PROCEEDINGS OF 2019 7TH INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC), 2019, : 149 - 153
[6] Ab initioanalytic calculation of point defects in AlGaN/GaN heterointerfaces
Gao, Yinlu
Sun, Dan
Jiang, Xue
Zhao, Jijun
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2021, 33 (03)
[7] Ab initio study of oxygen point defects in GaAs, GaN, and AlN
Mattila, T
Nieminen, RM
[J]. PHYSICAL REVIEW B, 1996, 54 (23): : 16676 - 16682
[8] Ab initio calculation of intrinsic point defects in CuInSe2
Domain, C
Laribi, S
Taunier, S
Guillemoles, JF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 1657 - 1663
[9] Ab initio molecular dynamics simulation of structural transformation in zinc blende GaN under high pressure
Xiao, H. Y.
Gao, Fei
Zu, X. T.
Weber, W. J.
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 490 (1-2) : 537 - 540
[10] Ab initio calculation of the structural and dynamical properties of the zinc-blende BN and its (110) surface
Bagci, S.
Duman, S.
Tutuncu, H. M.
Srivastava, G. P.
Ugur, G.
[J]. DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 1161 - 1165

← 1 2 3 4 5 →