Active plasmonic switching at mid-infrared wavelengths with graphene ribbon arrays

被引:120
|
作者
Chu, Hong-Son [1 ]
Gan, Choon How [2 ]
机构
[1] ASTAR, Elect & Photon Dept, Inst High Performance Comp, Singapore, Singapore
[2] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England
基金
新加坡国家研究基金会;
关键词
PHOTONICS; SILICON; DEVICES;
D O I
10.1063/1.4810003
中图分类号
O59 [应用物理学];
学科分类号
摘要
An active plasmonic switch based on single- and few-layer doped graphene ribbon array operating in the mid-infrared spectrum is investigated with theoretical and numerical calculations. It is shown that significant resonance wavelength shifts and modulation depths can be achieved with a slight variation of the doping concentration of the graphene ribbon. The few-layer graphene ribbon array device outperforms the single-layer one in terms of the achievable modulation depth. Our simulations reveal that, by modulating the Fermi-energy level between 0.2 eV and 0.25 eV, a four-layer graphene ribbon array device can achieve a modulation depth and resonance wavelength shift of similar to 13 dB and 0.94 mu m, respectively, compared to similar to 2.8 dB and 1.85 mu m for a single-layer device. Additionally, simple fitting models to predict the modulation depth and the resonance wavelength shift are proposed. These prospects pave the way towards ultrafast active graphene-based plasmonic devices for infrared and THz applications. (C) 2013 AIP Publishing LLC.
引用
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页数:3
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