Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

被引：3

作者：

Hainey, Mel, Jr. ^{[1
]}

Robin, Yoann ^{[2
]}

Amano, Hiroshi ^{[2
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Proc Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 02期

关键词：

POLYCRYSTALLINE-SILICON; INDUCED CRYSTALLIZATION; SI LAYERS; TEMPERATURE; THICKNESS; ORIENTATION;

D O I：

10.7567/1882-0786/aafb26

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Because of their >95% (111) surface orientation and very large (10-300 mu m) grain sizes, sub-50 nm Group IV thin films fabricated by metal-induced crystallization are promising seed layers for epitaxy. However, methods for evaluating Group IV film quality for subsequent homo-and heteroepitaxial growth have not been widely reported. Here, we show how pole figures obtained by electron backscatter diffraction allow for texture analysis and measurement of grain misorientation. Correlations with Group IV thin film processing parameters such as annealing temperature and film quality in heteroepitaxially grown GaN films are developed. (C) 2019 The Japan Society of Applied Physics

引用

页数：5