Characterization of on-wafer diode noise sources

被引：0
|
作者：
Randa, J [1 ]
Walker, D [1 ]
Dunleavy, L [1 ]
Billinger, R [1 ]
Rice, J [1 ]
机构：
[1] Natl Inst Stand & Technol, Div Electromagnet Fields, Boulder, CO 80303 USA
来源：
51ST ARFTG CONFERENCE DIGEST | 1998年
关键词：
noise; noise measurement; noise source; on-wafer measurement; noise characterization; noise temperature;
D O I：
10.1109/ARFTG.1998.327277
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology(NIST). This paper reviews the methods for accurate on-wafer measurements of noise temperature and details the preliminary design and construction of the transfer standards. Measurements are presented of their noise temperatures at frequencies from 8 to 12 GHz. Such transfer standards could be used in interlaboratory comparisons or as a verification tool for checking on-wafer noise calibration accuracy.
引用
收藏
页码：53 / 61
页数：9
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