Phase transitions enable computational universality in neuristor-based cellular automata

被引:44
|
作者
Pickett, Matthew D. [1 ]
Williams, R. Stanley [1 ]
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
关键词
NEGATIVE-RESISTANCE;
D O I
10.1088/0957-4484/24/38/384002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We recently demonstrated that Mott memristors, two-terminal devices that exhibit threshold switching via an insulator to conductor phase transition, can serve as the active components necessary to build a neuristor, a biomimetic threshold spiking device. Here we extend those results to demonstrate, in simulation, neuristor-based circuits capable of performing general Boolean logic operations. We additionally show that these components can be used to construct a one-dimensional cellular automaton, rule 137, previously proven to be universal. This proof-of-principle shows that localized phase transitions can perform spiking computation, which is of particular interest for neuromorphic hardware.
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页数:7
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