Electronic Biosensors Based on III-Nitride Semiconductors

被引：66

作者：

Kirste, Ronny ^{[1
]}

Rohrbaugh, Nathaniel ^{[1
]}

Bryan, Isaac ^{[1
]}

Bryan, Zachary ^{[1
]}

Collazo, Ramon ^{[1
]}

Ivanisevic, Albena ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8 | 2015年 / 8卷

关键词：

semiconductors; surfaces; biosensors; nitrides; field-effect transistors; GALLIUM-NITRIDE; SURFACE-CHEMISTRY; GAN SURFACE; NERVE-CELL; PEPTIDE; ALN; FUNCTIONALIZATION; PASSIVATION; TRANSISTORS; ADSORPTION;

D O I：

10.1146/annurev-anchem-071114-040247

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

引用

页码：149 / 169

页数：21

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