Three-terminal mid-IR tunable emitters based on Wannier-Stark ladder transitions in semiconductor superlattices

被引：2
|
作者：
Rizzi, F
Scamarcio, G
Strasser, G
机构：
[1] Univ Bari, INFM, Dipartimento Interateneo Fis, I-70126 Bari, Italy
[2] Tech Univ Vienna, Inst Festkorperelekt, Mikrostrukturzentrum, Vienna, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the generation of widely tunable mid-infrared (5-13 mum) electroluminescence in a heterostructure bipolar transistor-like device. The radiation is associated with transitions between Wannier-Stark ladder states of a periodic superlattice included in the intrinsic region between base and collector. At low fields the spectrum is dominated by diagonal 1-1 transitions between ground levels localized in neighbouring wells. At larger fields, merging with the 2-1 intersubband emission is observed until intervalley Gamma-X electronic scattering limits the radiative efficiency above 230 kV cm(-1).
引用
收藏
页码：S87 / S88
页数：2
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