Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

Carefully optimized low-pressure metalorganic vapor phase epitaxy is used for homoepitaxial growth on distinctively pretreated GaN bulk single crystal substrates. Thereby, outstanding structural and optical qualities of the material have been achieved, exhibiting photoluminescence linewidths for bound excitons as narrow as 95 mu eV. These extremely sharp lines reveal fine structures, not reported for GaN. Additionally, all three free excitons as well as their excited states are visible in low-temperature photoluminescence at 2 K. These transitions are clearly identified by reflectance measurements. X-ray diffraction analysis of these layers reveal about 20 arcsec linewidth for the (0004) reflex using Cu-K alpha radiation. (C) 1999 American Institute of Physics. [S0003-6951(99)00934-1].